Image | Series Name | Part Number | Size (mm3) | Spec.Sheet | Manual |
---|---|---|---|---|---|
Epi Wafer | Undoped GaN | 2" (50.8㎜) |
Down |
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제품 설명
Feature
- Undoped GaN Epi. Wafer
- Single side polished (Growth surface)
Structure
- u-GaN / Sapphire substrate
Thickness (Included substrate)
- 430㎛±15㎛
Nomalized Single Spectrum
-300 ~ 700nm
- Specifications
-
Characteristics (at 25℃)
Parameter Typ. Test Conditions PL measurement Peak wavelength 362nm±2nm Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge ExcludeUniformity STD <3% FWHM <10㎚ FWHM STD <3% Thickness Thickness 2㎛+/-10% Thickness STD <10% XRD (002) <350 arcsec Panalytical
HRXRD(102) <450 arcsec Hall Carrier Concentration < -1×1017 /㎝ Accent
HL5500Mobility >200 ㎠/V·sec Doping material Si N/A - Mg N/A Technical inquiry : joocheol@geni-uv.com / Jeong Joo-cheol / Manager