| Image | Series Name | Part Number | Size (mm3) | Spec.Sheet | Manual |
|---|---|---|---|---|---|
|
Epi Wafer | n-Type GaN | 2" (50.8㎜) |
Down |
- |
제품 설명
Feature
- n-Type GaN Epi. Wafer
- Single side polished (Growth surface)
Structure
- n-GaN / u-GaN / Sapphire substrate
Thickness (Included substrate)
Nomalized Single Spectrum
-300 ~ 700nm
- Specifications
-
Characteristics (at 25℃)
Parameter Typ. Test Conditions PL measurement Peak wavelength 362nm±2nm Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge ExcludeUniformity STD <3% FWHM <10㎚ FWHM STD <3% Thickness Thickness 4㎛+/-10% Thickness STD <10% XRD (002) <400 arcsec Panalytical
HRXRD(102) <500 arcsec Hall Carrier Concentration < -1×1018 /㎝ Accent
HL5500Mobility >200 ㎠/V·sec Doping material Si used - Mg N/A Technical inquiry : joocheol@geni-uv.com / Jeong Joo-cheol / Manager