| Image | Series Name | Part Number | Size (mm3) | Spec.Sheet | Manual |
|---|---|---|---|---|---|
|
Epi Wafer | p-Type GaN | 2" (50.8㎜) |
Down |
- |
제품 설명
Feature
- p-Type GaN Epi. Wafer
-Single side polished (Growth surface)
Structure
-p-GaN / u-GaN / Sapphire substrate
Thickness (Included substrate)
- 430㎛±15㎛
Nomalized Single Spectrum
- 300 ~ 700nm
- Specifications
-
Characteristics (at 25℃)
Parameter Typ. Test Conditions PL measurement Peak wavelength 362nm±2nm Accent RPM2000
- Laser : 266nm Nd-YG
- 3mm Edge ExcludeUniformity STD <3% FWHM <10㎚ FWHM STD <3% Thickness Thickness 0.8㎛+/-10% Thickness STD <10% XRD (002) N/A Panalytical
HRXRD(102) N/A Hall Carrier Concentration N/A Accent
HL5500Mobility N/A Doping material Si N/A - Mg used Technical inquiry : joocheol@geni-uv.com / Jeong Joo-cheol / Manager